<?xml version="1.0" encoding="utf-8"?><rss version="2.0"><channel><title>Alberto Castellazzi, Andrea Irace</title><link>https://shop.theiet.org:443/editors/alberto-castellazzi-andrea-irace</link><description>Alberto Castellazzi, Andrea Irace</description><item><title>SiC Power Module Design</title><link>https://shop.theiet.org:443/sic-power-module-design</link><description>&lt;p xmlns="http://ns.editeur.org/onix/3.0/reference"&gt;High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.&lt;/p&gt;
&lt;p xmlns="http://ns.editeur.org/onix/3.0/reference"&gt;This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.&lt;/p&gt;
&lt;p xmlns="http://ns.editeur.org/onix/3.0/reference"&gt;Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.&lt;/p&gt;</description><pubDate>Wed, 07 Apr 2021 14:08:29 GMT</pubDate><guid isPermaLink="true">https://shop.theiet.org:443/sic-power-module-design</guid></item></channel></rss>