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RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

by Jianjun Gao

This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic course in electronic circuits and prerequisite knowledge for readers to apply the techniques and improve the performance of integrated circuits, reduce design cycles and increase their chance at first time success. The first chapters offer a general overview and discussion of microwave signal and noise matrices, and microwave measurement techniques. The following chapters address modeling techniques for field effect transistors and cover models such as: small signal, large signal, noise, and the artificial neural network based.

About the Author

Jianjun Gao received the B.Eng. and Ph.D. degrees from the Tsinghua University, and M. Eng. Degree from Hebei Semiconductor Research Institute. From 1999 to 2001, he was a Post-Doctoral Research Fellow at the Microelectronics R&D Center, Chinese Academy of Sciences developing PHEMT optical modulator driver. In 2001, he joined the school of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore, as a Research Fellow in semiconductor device modeling and on wafer measurement. In 2003, he joined the Institute for High-Frequency and Semiconductor System Technologies, Berlin University of Technology, Germany, as a research associate working on the InP HBT modeling and circuit design for high speed optical communication. In 2004, he joined the Electronics Engineering Department, Carleton University, Canada, as Post-doctor Fellow working on the semiconductor neural network modeling technique. From 2004 to 2007, He was a Full Professor of radio engineering department at the Southeast University, Nanjing, China. Since 2007, he has been a Full professor of school of information science and technology, East China Normal University, Shanghai, China. He has been involved with the characterization, modeling and on wafer measurement of microwave semiconductor devices, optoelectronics device and high-speed integrated circuit design for 17 years. He has authored and coauthored over 80 research papers.



Publication Year: 2010

Pages: 350

ISBN-13: 978-1-891121-89-0

Format: HBK

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