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Strained Silicon Heterostructures
Materials and devices
This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
About the Editors
Dr Maiti received his M Tech degree in Radio Physics and Electronics from the University of Calcutta and MSc from the University of Technology, Loughborough. His PhD was awarded by the Indian Institute of Technology, Kharagpur in 1984 where he remained and currently is a Professor in the Department of Electronics. He currently leads the semiconductor device/process simulation research group.
Dr Chakrabarti received his MSc(Tech) degree in Applied Physics and DSc from the University of Calcutta in 1974. He is now associated with the VLSI laboratory of the Indian Institute of Technology, Kharagpur after retiring as a Professor in the Department of Electronics.
Dr Ray received his MSc degree from the University of Calcutta and his M Tech and PhD from the Indian Institute of Technology, Kharagpur in 1991. He is now an Associate Professor in the Physics department leading the semiconductor materials processing research group.
C.K. Maiti, N.B. Chakrabarti, S.K. Ray